1. Valid provided that leads are kept at ambient temperature at a distance of 2mm from case. 70 72 74 76 78 80 82 84 86 88 90 0. 4 V Efficiency vs Output Current IO! mA V IN SW FB EN GND L1 10 mH D1 R1 R2 C FF C O 1 m F V OUT V IN to 28 V V IN 1. D3 1 of 2 BS250 BS250 PCHANNEL ENHANCEMENT MODE DMOS TRANSISTOR High Input Impedance Fast Switching Speed CMOS Logic Compatible Input Offer BS250 from Kynix Semiconductor Hong Kong Limited. IC Chips DATA SHEET Product specication File under Discrete Semiconductors, SC13b April 1995 DISCRETE SEMICONDUCTORS BS250 Pchannel enhancement mode vertical DMOS transistor BS170 2 ELECTRICAL CHARACTERISTICS (TA 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate Reverse Current (VGS 15 Vdc, VDS 0) IGSS 0. 01 10 nAdc DrainSource Breakdown Voltage BS EN 250 2000 British Standards available for immediate PDF download or next day delivery in printed format. BSEN250: 2000 Respiratory equipment. 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April Philips specicationPchannel enhancement mode verticalDMOS values in accordance with the Absolute Maximum System (IEC 134)THERMAL RESISTANCE datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors. TP0610LT, VP0610LT, BS250 Vishay Siliconix 2 Document Number: S Rev. H, 05Jul04 SPECIFICATIONS (T A 25 C UNLESS OTHERWISE NOTED) Limits TP0610LT VP0610LT BS250 DISCRETE SEMICONDUCTORS DATA SHEET BS250 Pchannel enhancement mode vertical DMOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification Pchannel enhancement mode vertical BS250 DMOS transistor DESCRIPTION QUICK REFERENCE DATA Pchannel enhancement mode Drainsource. sot23 pchannel enhancement mode vertical dmos fet issue 3 january 1996 partmarking detail mx absolute maximum ratings. parameter symbol value unit Page 1. 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